MZ-N5E1T0BW - MZ-N5E1T0
Samsung
- Management SW
- Not Available
- Shock
- 1,500 G & 0.5 ms (Half sine)
- Operating Temperature
- 0 - 70 ℃ Operating Temperature
- Reliability (MTBF)
- 1.5 Million Hours Reliability (MTBF)
- Power Consumption
- *Average: 2.7 W *Maximum: 4.3 W (Burst mode) *Actual power consumption may vary depending on system hardware & configuration
- Random Write (4 KB, QD1)
- Up to 40,000 IOPS * Performance may vary based on system hardware & configuration
- Random Read (4 KB, QD1)
- Up to 10,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD32)
- Up to 88,000 IOPS * Performance may vary based on system hardware & configuration
- Random Read (4 KB, QD32)
- Up to 97,000 IOPS * Performance may vary based on system hardware & configuration
- Sequential Write
- Up to 520 MB/s * Performance may vary based on system hardware & configuration
- Sequential Read
- Up to 540 MB/s * Performance may vary based on system hardware & configuration
- Device Sleep Mode Support
- Yes
- WWN Support
- World Wide Name supported
- Encryption Support
- AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
- GC (Garbage Collection)
- Auto Garbage Collection Algorithm
- S.M.A.R.T Support
- S.M.A.R.T Supported
- TRIM Support
- TRIM Supported
- Cache Memory
- Samsung 1GB Low Power DDR3
- Controller
- Samsung MGX Controller
- NAND Type
- Samsung V-NAND
- Weight
- Max 8 g
- Dimension (WxHxD)
- Max 80.15 x 22.15 x 2.38 (mm)
- Interface
- SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
- Form Factor
- M.2
- Capacity
- 1,000 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
- Application
- Client PCs